| PART |
Description |
Maker |
| EG1126 |
Integrated Flow Function, Off-LIne Flow Model PWM controller
|
Jingjing Microelectroni...
|
| IDT71T75902 71T75702_DS_59004 IDT71T75902S80PF IDT |
2.5V 1M x 18 ZBT Synchronous 2.5V I/O Flow-through SRAM
From old datasheet system
512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs
|
IDT
|
| GS881Z18BD-133 GS881Z18BD-133I GS881Z18BD-150 GS88 |
133MHz 8.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
150MHz 7.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
166MHz 7ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
200MHz 6.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
225MHz 6ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
250MHz 5.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
|
GSI Technology
|
| 17574 17574-5 |
HTSNK. C X-FLOW .9H LOW FLOW. THRU HOLE
HTSNK. C X-FLOW, .9H LOW FLOW. THRU HOLE
|
VICOR[Vicor Corporation]
|
| 18074 18074-6 |
HTSNK C X-FLOW .4H LOW FLOW THRU HOLE
HTSNK, C X-FLOW, .4H LOW FLOW THRU HOLE
|
VICOR[Vicor Corporation]
|
| MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128 |
3.3V I/O28K x 32，Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器)
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18，流量通过ZBT SRAM的电压（3.3V输入/输出Mb的流通式同步静态存储器
3.3V I/O28K x 36，Flow-Through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36，流量通过ZBT SRAM的电压（3.3V或输输出Mb的流通式同步静态存储器
2.5V I/O28K x 32，Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32，流量通过ZBT SRAM的电压（2.5V输入/输出Mb的流通式同步静态存储器
|
Micron Technology, Inc.
|
| VO85536A-X0130 VO85516A-B200A VO85533A-X0020 VO855 |
KOMPAKTVENTIL HIGH FLOW DRUCKLUFT FEDER
KOMPAKTVENTIL HIGH FLOW MAGNET FEDER
KOMPAKTVENTIL HIGH FLOW DRUCKLUFT DRUCKL KOMPAKTVENTIL高流量DRUCKLUFT DRUCKL
KOMPAKTVENTIL HIGH FLOW MAGNET MAGNET KOMPAKTVENTIL高流量磁
|
HIROSE ELECTRIC Co., Ltd.
Bourns, Inc.
|
| CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位（为512k × 36/1M × 18）流体系结构，通过与NoBLTM的SRAM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| GS8161Z32D-200I GS8161Z32D-166I GS8161Z32D-133I GS |
6.5ns 200MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
7ns 166MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
8.5ns 133MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
6ns 225MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
5.5ns 250MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
7.5ns 150MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
7ns 166MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
5.5ns 250MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
8.5ns 133MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
6.5ns 200MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
5.5ns 225MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
8.5ns 150MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
7.5ns 150MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
8.5ns 133MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
5.5ns 250MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
6ns 225MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
6.5ns 200MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| 15989 15989-A |
BOX 2.13X1.38X.58 W/CLP BLK
HTSNK B LONG .9H LOW FLOW, THREADED
HTSNK B LONG .9H LOW FLOW THREADED
|
VICOR[Vicor Corporation]
|
| MT55L256V18F1 MT55L256L18F1 |
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18，流量通过ZBT SRAM的电压（3.3V输入/输出Mb的流通式同步静态存储器
|
Micron Technology, Inc.
|
| IDT71V2559S75BG IDT71V2559S75BG8 IDT71V2559S75BQ I |
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/2.5V I/O
3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 2.5V I/O
|
IDT
|
