| PART |
Description |
Maker |
| FDG6303N01 FDG6303N |
Dual N-Channel, Digital FET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDC6303 FDC6303N |
Digital FET, Dual N-Channel
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| FDG6318PZ |
Dual P-Channel, Digital FET
|
Fairchild Semiconductor
|
| FDC6301 FDC6301N |
Dual N-Channel , Digital FET
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| 2SK2219 1026 2SK2219-21 2SK2219-23 |
1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
N-Channel Junction FET for Capacitor Microphone Applications(应用于电容器话筒的N沟道结型场效应管) N沟道场效应晶体管的结电容麦克风应用（应用于电容器话筒沟道结型场效应管
From old datasheet system
N-Channel Junction Silicon FET
|
Sanyo Electric Co., Ltd.
|
| 3SK309 |
Silicon N Channel MOS FET
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
|
Hitachi Semiconductor
|
| 2SK2135 2SK2135JM |
N-channel enhancement type DMOS FET
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| PHU78NQ03LT PHP78NQ03LT |
N-channel TrenchMOS logic level FET
N-channel TrenchMOSTM logic level FET 75 A, 25 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| PMGD290XN PMGD290XN115 GD290XN115 |
Dual N-channel mTrenchMOS extremely low level FET
From old datasheet system
Dual N-channel uTrenchmos (tm) extremely low level FET 860 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
