| PART |
Description |
Maker |
| 2SK2347 |
N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications
|
SANYO
|
| Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HAT2058R-EL-E HAT2058RJ-EL-E HAT2058R05 |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| RJK0222DNS-00-J5 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
|
Renesas Electronics Corporation
|
| CPH6313 |
P-Channel Silicon MOSFET High-Speed Switching Applications
|
Sanyo Semicon Device
|
| H7N1004LS |
Silicon N-Channel MOSFET High-Speed Power Switching
|
Renesas Electronics Corporation.
|
| HS56021 HS56021TZ-E |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SK294 2SK295 |
SILICON N CHANNEL MOSFET HIGH SPEED POWER SWITCHING
|
Hitachi Semiconductor
|
| HS54097TZ-E |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJL6013DPP RJL6013DPP-00-T2 |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H5N2305PF H5N2305PF-E |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
