PART |
Description |
Maker |
PE15A1008 |
23 dBm IP3, 1.6 dB NF, 13 dBm, 20 MHz to 3 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
TA060-180-30-28 |
6 - 18 GHz 28 dBm Amplifier
|
Transcom, Inc.
|
TA008-055-20-24 |
0.8 - 5.5 GHz 25 dBm Amplifier
|
Transcom, Inc.
|
TA010-180-30-15 |
1 - 18 GHz 16 dBm Amplifier
|
Transcom, Inc.
|
TA020-100-30-15 |
2 - 10 GHz 15 dBm Amplifier
|
Transcom, Inc.
|
Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
TA075-180-24-12 |
7.5 - 18 GHz 12 dBm Amplifier 7.5 - 18吉赫12 dBm的放大器
|
Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
|
MGA-83563-TR1 MGA83563BLK |
22dBm 3V Power Amplifier for 0.5-6 GHz Applications(应用在频率为0.5-6 GHz2dBmV 功率放大 2dBm 3V的功率放大器(应用在频率.5-6千兆赫的2dBmV的功率放大器.5-6 GHz的应用) 22 dBm PSAT 3V Power Amplifier for 0.5 6 GHz Applications 22 dBm的PSAT 3V的功率放大器.5 6 GHz的应
|
Agilent(Hewlett-Packard) Avago Technologies, Ltd.
|
UPC1679 |
5 V-BIAS/ 5.5 dBm OUTPUT/ 1.8 GHz WIDEBAND Si MMIC AMPLIFIER
|
NEC
|
BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|