| PART |
Description |
Maker |
| 1SS302TE85LF 1SS302T5LFH |
Ultra High Speed Switching Applications
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 2SC3437 E000848 |
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING/ COMPUTER/ COUNTER APPLICATIONS)
From old datasheet system
ULTRA HIGH SPEED SWITCHING APPLICATIONS COMPUTER, COUNTER APPLICATIONS
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING, COMPUTER, COUNTER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| HN2D02FUTW1T1 HN2D02FUTW1T1/D HN2D02FUTW1T1G |
Ultra High Speed Switching Diodes
Ultra High Speed Switching Diodes
|
ON Semiconductor
|
| L1SS226LT1G-15 |
Ultra High Speed Switching Application
|
Leshan Radio Company
|
| L1SS184LT1G |
Ultra High Speed Switching Application
|
Leshan Radio Company
|
| 1SS226 |
Ultra High Speed Switching Application
|
Yea Shin Technology Co....
|
| 1SS18407 1SS184 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS30907 |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 1SS19307 1SS193 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS36207 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS361FV |
Ultra-High-Speed Switching Applications
|
Toshiba Semiconductor
|
