PART |
Description |
Maker |
RM400HV-34S |
CAP CER 22000PF 10% 50V X8R 0805 HIGH SPEED SWITCHING USE INSULATED TYPE Fast Recovery Diode Modules, F Series (for IGBT speed switching)
|
Mitsubishi Electric Sem... Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
1SS399 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage High Speed Switching Applications
|
TOSHIBA
|
1SS199 1SS199MHD |
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching 硅肖特基二极管各种探测器,高速开 Silicon Schottky Barrier Diode for Various Detector High Speed Switching Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
BAR74 Q62702-F704 |
From old datasheet system Silicon Switching Diode (For high-speed switching)
|
SIEMENS[Siemens Semiconductor Group]
|
BAV99HMFH |
Switching Diode (High speed switching) (corresponds to AEC-Q101)
|
ROHM
|
GDMBD2004 |
The GDMBD2004 is designed for ultra high speed switching SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD GTM CORPORATION
|
Q62702-A1030 BAV70W |
From old datasheet system SILICON SWITCHING DIODE ARRAY (FOR HIGH SPEED SWITCHING APPLICATIONS COMMON CATHODE)
|
Siemens Semiconductor Group SIEMENS AG
|
BAV99W Q62702-A1051 |
From old datasheet system Silicon Switching Diode Array (Connected in series For high speed switching applications)
|
Siemens Semiconductor Group Infineon
|