| PART |
Description |
Maker |
| DNS12S0A0R10NFB |
Delphi DNM, Non-Isolated Point of Load DC/DC Power Modules: 2.8-5.5Vin, 0.75-3.3V/10A out 德尔福移民局的，非隔离负载点DC / DC电源模块.8 5.5Vin.75-3.3V/10A
|
Delta Electronics, Inc.
|
| DCS04S0A0S06NFA DCM04S0A0S06NFA DCM04S0A0S06PFA DC |
Non-Isolated Point of Load DC/DC Power Modules: 2.4-5.5Vin 0.6-3.63V/6Aout
|
Delta Electronics, Inc.
|
| DNS04S0A0S06NFB DNS04S0A0R06NFB DNS04S0A0R06PFB DN |
Non-Isolated Point of Load DC/DC Power Modules: 2.8-5.5Vin, 0.75-3.3V/6Aout
Non-Isolated Point of Load DC/DC Power Modules: 2.8-5.5Vin, 0.75-3.3V/6Aout
|
Delta Electronics, Inc.
|
| IRF640 RF1S640SM FN1585 |
18A, 200V, 0.180 Ohm,, N-Channel PowerMOSFET(18A, 200V, 0.180 Ohm,N娌??澧?己?????OS?烘?搴??)
From old datasheet system
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
INTERSIL CORP
|
| SML9030-T254 SML9030T254 |
P-Channel MOS Transistor(Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω)(P沟道MOS晶体Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω))
|
Semelab(Magnatec)
TT electronics Semelab Limited
Seme LAB
|
| IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 18A条一（c）|63AB
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条）
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FDMS9620S |
Dual N-Channel PowerTrench? MOSFET Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ
Dual N-Channel PowerTrench㈢ MOSFET Q1: 30V, 16A, 21.5mヘ Q2: 30V, 18A, 13mヘ
|
Fairchild Semiconductor
|
| IRF240-243 IRF241 IRF242 IRF243 IRF641 IRF642 IRF6 |
N-Channel Power MOSFETs, 18A, 150-200V N沟道功率MOSFET8A条，15000
N-Channel Power MOSFETs/ 18A/ 150-200V
N-Channel Power MOSFETs 18A 150-200V
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| TS3300DB |
A 0.6-4.5VIN, 1.8-5.25VOUT, 3.5A, Low Input Voltage, High-Efficiency Boost LDO
|
Touchstone Semiconductor Inc
|
| IRF640N IRF640NL IRF640NS |
18 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-CHANNEL POWER MOSFETS 200V, 18A, 0.15OHM
N-Channel Power MOSFETs 200V, 18A, 0.15-Ohm
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR |
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)
Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)
|
IRF[International Rectifier]
|
