PART |
Description |
Maker |
W5232 W523X W5231 W5233 W5234 |
Power Speech LOW VOLTAGE ADPCM VOICE SYNTHESIZER ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (6 seconds @6.7K) ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (12 seconds @6.7K) ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (9 seconds @6.7K) ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (3 seconds @6.7K)
|
WINBOND[Winbond] Winbond Electronics
|
SST3S-C SST4H-L SST4I-C |
Sta-Strap ? Cable Ties . Nylon 6.6
|
PANDUIT CORP.
|
PM39F020-70JCE PM39F020-55PCE PM39F020-55JCE PM39F |
1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory 1兆位/ 2 4兆位5伏,只有闪存的CMOS
|
PMC-Sierra, Inc.
|
M29W064FB90N3E M29W064FB90N3F M29W064FT |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
39LF020 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Silicon Storage Technology
|
SST39LF400A SST39VF800A SST39LF800A SST39VF200A SS |
2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
|
Microchip Technology
|
SST49LF004A SST49LF004A-33-4C-NH SST49LF004A-33-4C |
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
|
SST[Silicon Storage Technology, Inc] SST[Silicon Storage Technology Inc]
|
DA28F016XS15 E28F016XS20 28F016XS DA28F016XS-15 DA |
16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
|
INTEL[Intel Corporation]
|
CY7C1387F-167BGC CY7C1387F-167BGI CY7C1387F-167BGX |
Replacement for Intersil part number 8100604EA. Buy from authorized manufacturer Rochester Electronics. 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 18兆位(为512k × 36 / 1兆位× 18)流水线双氰胺同步静态存储器
|
Cypress Semiconductor Corp.
|
JS28F256P33BFA 320003 |
NumonyxTM StrataFlash Embedded Memory P33 (256-Mbit, 256-Mbit/256- Mbit) 130nm to 65nm
|
Numonyx B.V
|