PART |
Description |
Maker |
CY7C1297H-133AXC |
1-Mbit (64K x 18) Flow-Through Sync SRAM; Architecture: Standard Sync, Flow-through; Density: 1 Mb; Organization: 64Kb x 18; Vcc (V): 3.1 to 3.6 V
|
CYPRESS SEMICONDUCTOR CORP
|
CY7C1297F-117AC CY7C1297F |
1-Mb (64K x 18) Flow-Through Sync SRAM 1-Mbit (64K x 18) Flow-Through Sync SRAM
|
Cypress Semiconductor
|
AS7C3364FT36B-80TQIN AS7C3364FT32B AS7C3364FT32B-1 |
From old datasheet system Shielding Gasket; Gasket Style:D-Shaped; Body Material:Beryllium Copper alloy #C17200; Height:.11"; Length:16"; Mounting Type:Adhesive; Thickness:.0027"; Width:.28" 64K X 32 STANDARD SRAM, 10 ns, PQFP100 3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 32 STANDARD SRAM, 6.5 ns, PQFP100 3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 36 STANDARD SRAM, 7.5 ns, PQFP100
|
Alliance Semiconductor ... ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp.
|
IDT70V9289L 70V9389_DS_62206 IDT70V9389L9PRFI IDT7 |
64K x 18 Synch, 3.3V Dual-Port RAM, PipeLined/Flow-Through 64K x 16 Sync, 3.3V Dual-Port Ram, PipeLined/Flow-Through HIGH-SPEED 3.3V 64K x18/x16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM From old datasheet system
|
IDT[Integrated Device Technology]
|
CY7C1021BN09 CY7C1021BNL-15ZSXA CY7C1021BN-15ZXIT |
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 4.5 to 5.5 V; 64K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Cypress Semiconductor, Corp. http://
|
CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR-II SRAM 4-Word Burst Architecture 36-Mbit QDR-II SRAM 2-Word Burst Architecture 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 4-Mbit (128K x 36) Pipelined SRAM with NoBL Architecture 4-Mbit (128K x 36) Flow-through SRAM with NoBL Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture SPI Serial EEPROM SPI串行EEPROM 36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM 256K (32K x 8) Static RAM SPI串行EEPROM
|
Analog Devices, Inc. Electronic Theatre Controls, Inc.
|
CY7C1361C-133AXC CY7C1361C-133BGI CY7C1361C-133AJX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA119 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 9兆位56 × 36/512K × 18)流通过的SRAM 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 6.5 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
M27C1024-35C1 M27C1024-90C1 M27C1024-12C6 M27C1024 |
64K X 16 OTPROM, 100 ns, PDSO40 64K X 16 OTPROM, 100 ns, PQCC44 64K X 16 OTPROM, 100 ns, PDIP40 64K X 16 UVPROM, 100 ns, CDIP40 64K X 16 UVPROM, 45 ns, CDIP40 1 MBIT (64KB X16) UV EPROM AND OTP EPROM
|
STMICROELECTRONICS ST Microelectronics
|
CY7C1231F-100AC CY7C1231F05 |
2-Mbit (128K x 18) Flow-through SRAM with NoBL Architecture 2-Mbit (128K x 18) Flow-through SRAM with NoBL⑩ Architecture
|
Cypress Semiconductor
|
UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR-II SRAM 2-Word Burst Architecture 1-Mbit (64K x 16) Static RAM 1M x 4 Static RAM x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM 4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
CY7C1483V25-100BZC CY7C1483V25-100BZXC CY7C1483V25 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM 1M X 72 CACHE SRAM, 8.5 ns, PBGA209 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM 1M X 72 CACHE SRAM, 6.5 ns, PBGA209 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM 4M X 18 CACHE SRAM, 6.5 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM 4M X 18 CACHE SRAM, 8.5 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|