| PART |
Description |
Maker |
| Q62703-Q1094 SFH486 |
From old datasheet system
GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| MRF9180R6 |
880 MHz, 170 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| MRF9120 |
MRF9120, MRF9120S 880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| PDI-G103 |
GaAlAs (880 nm peak) Photodiode
|
List of Unclassifed Manufacturers
|
| OD-11X11-C |
1 ELEMENT, INFRARED LED, 880 nm TO-46
|
TE Connectivity, Ltd.
|
| SFH4680 SFH4685 Q65110A1570 Q65110A1571 |
Engwinklige LED im MIDLED-Geh?use (880 nm)
|
OSRAM GmbH
|
| RA13H8891MB10 |
880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| OIS-330880 OIS-330880-X-TD OIS-330880-X-TU |
Series 330 - 1206 with Lens IR high intensity 880 nm
|
OSA Opto Light GmbH
|
| AWB7122P8 AWB7122P7 |
1.805 - 1.880 GHz Small-Cell Power Amplifier Module
|
Skyworks Solutions
|
| OIS-180880 OIS-180880-X-T |
Series 180 - 0805 lower height IR high intensity 880 nm
|
OSA Opto Light GmbH
|
| Q65110A2742 SFH7222 SFH722212 |
GaAlAs-IR-Lumineszenzdiode (880 nm) und grüne GaP-LED (565 nm)
|
OSRAM GmbH
|
