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RM20TPM-H02 - Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Rectifier Diodes, 800V MEDIUM POWER GENERAL USE INSULATED TYPE

RM20TPM-H02_4356452.PDF Datasheet

 
Part No. RM20TPM-H02 RM20TPM-H RM20TPM-M
Description Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
Rectifier Diodes, 800V
MEDIUM POWER GENERAL USE INSULATED TYPE

File Size 35.45K  /  3 Page  

Maker


Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor



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Part: RM20TPM-2H
Maker: MITSUBIS..
Pack: 模块
Stock: Reserved
Unit price for :
    50: $30.15
  100: $28.65
1000: $27.14

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