| PART |
Description |
Maker |
| TC57512AD-15 TC57512AD-20 |
65536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
|
ETC
List of Unclassifed Manufacturers
|
| GAL16V8-25LP |
CMOS Electrically Erasable Programmable Logic Device
|
ETC
|
| PEEL22LV10AZ PEEL22LV10AZJ-25 PEEL22LV10AZJ-25L PE |
CMOS Programmable Electrically Erasable Logic Device
|
Anachip Corp
|
| TC57256AD TC57256D-70 TC57256D-85 TC57257P |
32768 x 8-Bit CMOS UV Erasable and Electrically Programmable ROM
|
Toshiba
|
| HN58C256FP-20 |
32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM
|
Hitachi Semiconductor
|
| HN58C65FP-25 |
8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM
|
http://
|
| 24C02 24C01 |
CMOS I2C 2-WIRE BUS 1K/2K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 128/256 X 8 BIT EEPROM
|
List of Unclassifed Manufacturers
ETC
|
| IM5603 IM5623 |
ELECTRICALLY PROGRAMMABLE 1024 BIT BIPOLAR READ ONLY MEMORY 1024位电可编程只读存储器双极
(IM5603 / IM5623) ELECTRICALLY PROGRAMMABLE 1024 BIT BIPOLAR READ ONLY MEMORY
|
Intersil, Corp.
Intersil Corporation
|
| HN58X2564F HN58X2564FPI |
Electrically Erasable and Programmable Read Only Memory
|
RENESAS
|
| BR93L56 |
128 X 16 bIT Electrically Erasable Programmable ROM
|
ROHM[Rohm]
|
| HN2716 HN462716G HN462716 |
2048-word x 8bit Erasable and Electrically Programmable Only Memory
|
HITACHI[Hitachi Semiconductor]
|
