| PART |
Description |
Maker |
| MJ16018 MJW16018 ON1986 |
Power 10A 800V NPN
From old datasheet system
NPN Silicon Power Transistors
POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247AE
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola Mobility Holdings, Inc.
|
| 2N5655 2N5656 2N5657 |
Power 1A 350V NPN
POWER TRANSISTORS NPN SILICON
Plastic NPN Silicon High-Voltage Power Transistor
|
ONSEMI[ON Semiconductor]
|
| MJW16110 MJ16110 ON1988 |
POWER TRANSISTORS 15 AMPERES 400 VOLTS 175 AND 135 WATTS 15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-247AE
From old datasheet system
NPN Silicon Power Transistors
|
Motorola Mobility Holdings, Inc.
http://
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| 2SC2344 2SA1011 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications
PNP/NPN Epitaxial Planar Silicon Transistors
|
Sanyo
|
| BD135 BD139 ON0184 BD137 |
Plastic Medium Power Silicon NPN Transistor 1.5 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-225AA
POWER TRANSISTORS NPN SILICON
CASE 77-09 TO-225AA TYPE
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| BUW49 BUW48 4206 |
HIGH CURRENT NPN SILICON TRANSISTORS
HIGH POWER NPN SILICON TRANSISTORS
From old datasheet system
|
ST Microelectronics
STMicroelectronics
|
| 2SC4414 |
NPN Epitaxial Planar Silicon Transistors Low-Frequency Power Amplifier Applications
PNP/NPN Epitaxial Planar Silicon Transistors
|
Sanyo
|
| 2N4922 2N4921 2N4923 2N4921-D |
Medium-Power Plastic NPN Silicon Transistors
1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS
|
ONSEMI[ON Semiconductor]
|
| 2N6497 2N6498 ON0098 |
POWER TRANSISTORS NPN SILICON
5 AMPERE POWER TRANSISTORS
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| NJT4031N NJT4031NT1G NJT4031NT3G |
NPN SOT223 40V/3A Low VCE(sat) Power Transistor
Bipolar Power Transistors NPN Silicon
|
ON Semiconductor
|
| MJE13002 MJE13003 |
1.400W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 1.500A Ic, 8 - 40 hFE.
NPN EPITAXIAL SILICON POWER TRANSISTORS
|
Continental Device India Limited
|
