| PART |
Description |
Maker |
| C106 C106S C106A C106B C106C C106D C106E C106F C10 |
4A sensitive-gate silicon controlled rectifier. Vrrm 700V.
4-A Sensitive-Gate Silicon Controlled Rectifiers
|
General Electric Solid State
GESS[GE Solid State]
http://
|
| MCR106-6 MCR106-8 MCR106-D |
Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors
Sensitive Gate Silicon Controlled Rectifiers
|
ON Semiconductor
|
| MAC4DHM MAC4DHMT4 MAC4DHM-001 |
Sensitive Gate Triacs Silicon Bidirectional Thyristors
From old datasheet system
Sensitive Gate Triacs Silicon Bidirectional Thyristors 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC
|
ONSEMI[ON Semiconductor]
|
| T2302B T2300 T2301 |
(T2300 - T2302) 2.5-A sensitive-gate silicon triac. Max 10 mA gate
|
GE Solid State
|
| MCR22-6-D MCR22-2RL1 |
Seinsitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
Sensitive Gate SCR
|
ON Semiconductor
|
| BT139 BT139-600E |
Passivated, sensitive gate triacs in a SOT78 (TO-220AB) plastic package.
BT139 series E Triacs; sensitive gate
|
NXP Semiconductors
|
| 2N6072 2N6072A 2N6072B 2N6074 2N6074A 2N6074B 2N60 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V.
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V.
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.
|
Motorola
|
| WCD6C60S |
Sensitive Gate Silicon Controlled Rectifiers
|
Shenzhen Winsemi Microelectronics Co., Ltd
|
| KK100-6 |
Sensitive Gate Silicon Controlled Rectifiers
|
KODENSHI KOREA CORP.
|
| MCR100-6 |
Sensitive Gate Silicon Controlled Rectifiers
|
WINSEMI SEMICONDUCTOR COMPANY LIMITED
|
| MCR100-8 |
Sensitive Gate Silicon Controlled Rectifiers
|
WINSEMI SEMICONDUCTOR COMPANY LIMITED
|
