PART |
Description |
Maker |
HWL26NC |
L-Band Power FET Non-Via Hole Chip
|
Hexawave, Inc
|
HWL34NC |
L-Band Power FET Non-Via Hole Chip
|
Hexawave, Inc
|
HWC27YC HWC27YC-V1-15 |
C-Band Power Non-Via Hole Chip C-Band Power FET Via Hole Chip
|
Hexawave, Inc
|
MGF0905A MGF0905 0905A |
MINIATURE POWER RELAY L /S BAND POWER GaAs FET L,S BAND POWER GaAs FET LS BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
FLM5359-4F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET C-Band Internally Matched FET
|
Eudyna Devices Inc
|
NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体 CAP 15UF 16V 10% TANT SMD-6032-28 TR-7 CAP TANTALUM 1.5UF 35V 10% SMD 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp. NEC Corp. NEC[NEC] http://
|
HWF1682RA |
20 W L-band GaAs power FET
|
HEXAWAVE
|
FLC167WF |
C-Band Power GaAs FET
|
Fujitsu Component Limited.
|
NE6510179 NE6510179A NE6510179A-T1 |
1 W L-BAND POWER GaAs HJ-FET
|
NEC[NEC]
|
HWF1686RA |
5.4 W L-band GaAs power FET
|
HEXAWAVE
|
FLX207MH-12 |
X, Ku Band Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|