| PART |
Description |
Maker |
| NE985100 NE985200 NE985400 |
100 mA, 2 W, K-band power GaAs MESFET
200 mA, 2 W, K-band power GaAs MESFET
400 mA, 2 W, K-band power GaAs MESFET
|
NEC
|
| NE67483B NE67400 |
NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET 邻舍L降至Ku波段低噪声放大器N沟道功率GaAs MESFET
|
California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
|
| NE71083-07 NE710 NE71000 NE71083-06 NE71083-08 NE7 |
90 GHz, low noise Ku-K band GaAs MESFET
LOW NOISE Ku-K BAND GaAs MESFET 低噪声谷K波段GaAs MESFET器件
|
NEC Corp.
NEC, Corp.
|
| NE650103M-A |
10 W L & S-BAND POWER GaAs MESFET
|
California Eastern Laboratories
|
| NEZ1011-3E |
X BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC, Corp.
|
| AFM06P3-213 AFM06P3-212 |
Ka Band Power GaAs MESFET Chips
|
Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
|
| NEZ1414-2E |
KU BAND, GaAs, N-CHANNEL, RF POWER, MESFET T-78, 2 PIN
|
NEC, Corp.
|
| NES1823P-100 |
100W L-BAND PUSH-PULL POWER GaAs MESFET
|
NEC[NEC]
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| NE76000 NE76000L |
LOW NOISE L TO Ku BAND GaAs MESFET
|
NEC Corp.
NEC[NEC]
|
| NE13700 NE13783S NE13783-4 |
80 GHz, 3 V, low noise Ku-band GaAs MESFET
|
NEC
|
