| PART |
Description |
Maker |
| SFH4249 |
High Power Infrared Emitter
|
OSRAM GmbH
|
| SFH4140 |
High Power Infrared Emitter (940 nm)
|
OSRAM GmbH
|
| SFH4258 |
(SFH4258 / SFH4259) High Power Infrared Emitter
|
OSRAM GmbH
|
| VSMY7850X011106 |
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
| VSMY7852X01-GS08 |
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Techno
|
Vishay Siliconix
|
| SFH4202 |
Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
| OPE5585 |
High Speed GaAlAs Infrared Emitter
|
OPTEK Technologies
|
| SFH4000 |
Schnelle IR-Lumineszenzdiode High Speed Infrared Emitter
|
OSRAM GmbH
|
| SFH4301 Q62702-P5166 |
High-Speed Infrared Emitter (950 nm) in 3 mm Radial Package
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| Q62703-Q1095 SFH487-2 Q62703-Q2174 SFH487 |
From old datasheet system
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 镓铝砷红外光Lumineszenzdiode 880nm红外线发射器880镓铝砷纳
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| VSMY3850-GS08 VSMY3850-GS18 |
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
| VSLY5850 |
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
