| PART |
Description |
Maker |
| 1SS193 E000243 |
From old datasheet system
ULTRA HIGH SWITCHING APPLICATION
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| KTK5131S |
SMOS FET/ Analog Switch Application
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| HN2D02FUTW1T1 HN2D02FUTW1T1/D HN2D02FUTW1T1G |
Ultra High Speed Switching Diodes
Ultra High Speed Switching Diodes
|
ON Semiconductor
|
| 1SS187 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
| 1SS34907 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| HN4D02JU |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| HN4D01JU |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 1SS18707 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS336 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
| 1SS33607 1SS336 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| HN1D04FU |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS38207 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
