| PART |
Description |
Maker |
| BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve...
From old datasheet system
NPN Silicon Transistors with High Reverse Voltage
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
NPN Silicon RF Transisrors
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管（高耐压l低集电极发射极饱和电压）
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| MJW16110 MJ16110 ON1988 |
POWER TRANSISTORS 15 AMPERES 400 VOLTS 175 AND 135 WATTS 15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-247AE
From old datasheet system
NPN Silicon Power Transistors
|
Motorola Mobility Holdings, Inc.
http://
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| MJE1300906 MJE13009G MJE13009 |
SWITCHMODE Series NPN Silicon Power Transistors(开关模式系列NPN硅功率晶体管) 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
|
ONSEMI[ON Semiconductor]
|
| BUW49 BUW48 4206 |
HIGH CURRENT NPN SILICON TRANSISTORS
HIGH POWER NPN SILICON TRANSISTORS
From old datasheet system
|
ST Microelectronics
STMicroelectronics
|
| 2N6388 2N6387 |
DARLINGTON NPN SILICON POWER TRANSISTORS
Plastic Medium-Power Silicon Transistors
|
ONSEMI[ON Semiconductor]
|
| 2SC4414 |
NPN Epitaxial Planar Silicon Transistors Low-Frequency Power Amplifier Applications
PNP/NPN Epitaxial Planar Silicon Transistors
|
Sanyo
|
| 2N6497 2N6498 ON0098 |
POWER TRANSISTORS NPN SILICON
5 AMPERE POWER TRANSISTORS
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| TIP105 TIP100 TIP106 TIP101 TIP102 TIP107 ON2977 |
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
From old datasheet system
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| 2N6338 2N6339 2N6341 2N6340 2N6338-D |
High-Power NPN Silicon Transistors
POWER TRANSISTORS NPN SILICON
|
ONSEMI[ON Semiconductor]
|
| MJE13002 MJE13003 |
1.400W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 1.500A Ic, 8 - 40 hFE.
NPN EPITAXIAL SILICON POWER TRANSISTORS
|
Continental Device India Limited
|
