PART |
Description |
Maker |
MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应 From old datasheet system 2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
EIA1414-8P |
14.0-14.5GHz, 8W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIB1414A-4P |
14.0-14.5GHz 4W Internally Matched Power FET
|
Excelics Semiconductor
|
MGFK30V4045_05 MGFK30V4045 MGFK30V404505 |
14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFK44A4045 |
14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
MGFS45V2735 |
2.7 - 3.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
MGFC42V7785A |
7.7-8.5GHz Band 16W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC36V7785A C367785A |
From old datasheet system 7.7 - 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFK25V4045_03 MGFK25V4045 MGFK25V404503 |
14.0-14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
|
SP8910 SP8910KGMP1T SP8910KG SP8910KGMP1S |
5GHZ ±10 Fixed Modulus Divider 5GHZ 10 Fixed Modulus Divider 5GHZ ÷10 Fixed Modulus Divider(5GHZ ÷10超高速低功耗固定模数除法器) MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:30A; On-Resistance, Rds(on):0.028ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No
|
MITEL[Mitel Networks Corporation] Mitel Semiconductor
|
LT5572 |
1.5GHz to 2.5GHz High Linearity Direct Quadrature Modulator From old datasheet system
|
Linear Technology Corporation
|