| PART |
Description |
Maker |
| SCK140LP SCK120LP |
VOLTAGE 20V ~ 40V 1.0AMP Low Vf Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| 2SA1834 A5800344 2SC5001 2SC5001TLR 2SA1834TLR 2SC |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 20V的五（巴西）总裁| 10A条一（c）|律师- 63
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10A I(C) | SC-63
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | SC-63
Low VCE(sat) Transistor (Strobe flash) (-20V, -10A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
ROHM
|
| 2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A.
Transistors
|
Usha India Ltd.
|
| SR280 SR230 |
VOLTAGE 20V ~ 100V 2.0 AMP Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| SR260 SR2100 SR240 SR220 |
VOLTAGE 20V ~ 100V 2.0 AMP Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| FM130-NS |
1A SMD SCHOTTKY BARRIER RECTIFIERS, 20V-40V
|
Frontier Electronics.
|
| SL32-AL |
3.0A LOW VF SCHOTTKY BARRIER RECTIFIERS-20V-40V SMA-L PACKAGE
|
WILLAS ELECTRONIC CORP
|
| SL12-M |
1.0A LOW VF SCHOTTKY BARRIER RECTIFIERS-20V-40V SOD-123-L PACKAGE
|
WILLAS ELECTRONIC CORP
|
| STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No
MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
|
Electronics Industry Public Company Limited
EIC Semiconductor
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
|
| 2SC2059KJM 2SC2059KJN 2SC2059KJP 2SC3082KSP 2SC308 |
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 600MA I(C) | SOT-23 晶体管|晶体管|叩| 32V的五（巴西）总裁| 600毫安一（c）| SOT - 23封装
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 25V的五（巴西）总裁| 50mA的一（c）| SOT - 23封装
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 200MA I(C) | SOT-23
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SOT-23
TRANSISTOR | BJT | NPN | 19V V(BR)CEO | 50MA I(C) | SOT-23
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR|BJT|NPN|20VV(BR)CEO|20MAI(C)|SOT-23
|
TT electronics Semelab, Ltd.
|
