PART |
Description |
Maker |
CY7C1514V18 CY7C1514V18-200BZC CY7C1514V18-250BZC |
72-Mbit QDR-II?SRAM 2-Word Burst Architecture 72-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture 72-MBIT QDR-II⒙ SRAM 2-WORD BURST ARCHITECTURE 72-Mbit QDR-II SRAM 2-Word Burst Architecture
|
CYPRESS[Cypress Semiconductor]
|
CY7C1515V18-250BZC CY7C1526V18 CY7C1526V18-167BZC |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture 72-Mbit QDR⑩-II SRAM 4-Word Burst Architecture 72-Mbit QDR?II SRAM 4-Word Burst Architecture
|
CYPRESS[Cypress Semiconductor]
|
CY7C1568KV18-500BZXC CY7C1568KV18-500BZC CY7C1570K |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
CY7C1510V18-167BZXC CY7C1510V18-167BZXI CY7C1514V1 |
72-Mbit QDR-II垄芒 SRAM 2-Word Burst Architecture 72-Mbit QDR-II SRAM 2-Word Burst Architecture 72-Mbit QDR-II?SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
CY7C1410BV18-167BZI CY7C1410BV18-167BZXI CY7C1425B |
36-Mbit QDR-II垄芒 SRAM 2-Word Burst Architecture 36-Mbit QDR-II SRAM 2-Word Burst Architecture 36-Mbit QDR-II?/a> SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
CY7C1513JV18-250BZXC |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
CY7C1911BV18-278BZXC CY7C1911BV18-278BZXI CY7C1911 |
18-Mbit QDRII SRAM 4-Word Burst Architecture 2M X 9 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture 2M X 8 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture 1M X 18 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture 512K X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
CY7C1261V18 CY7C1261V18-300BZC CY7C1261V18-300BZI |
36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 36-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
CY7C1561V18-333BZC CY7C1561V18-333BZI CY7C1563V18 |
72-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 72-Mbit QDR?II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
CY7C1418AV18-267BZC |
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
|
CYPRESS SEMICONDUCTOR CORP
|
CY7C1241V18-300BZXC CY7C1256V18 CY7C1256V18-300BZC |
36-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit QDR??II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit QDR?II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|