| PART |
Description |
Maker |
| EM7162SP16AW-10L EM7162SP16AW-10LL EM7162SP16AW-10 |
1M x 16Bit Multiplexed Single Transistor RAM
|
Emerging Memory & Logic Solutions Inc
|
| ICL7129ACQH-D |
Low-Noise, 4 1/2 Digit, Single-Chip ADC with Multiplexed LCD Drivers
|
MAXIM - Dallas Semiconductor
|
| AKD4641EN-A |
16bit stereo CODEC with built-in Microphone-amplifier and 16bit Mono CODEC for Bluetooth Interface.
|
Asahi Kasei Microsystems
|
| PCA9559 PCA9559PWDH |
5-bit multiplexed/1-bit latched 6-bit I I C EEPROM(5位多路的/1位锁存的6位IIC EEPROM) 5multiplexed/1-bit锁存6位国际进口的EEPROM位多路的/ 1位锁存的6位国际进口的EEPROM
5-bit multiplexed/1-bit latched 6-bit I2C EEPROM
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| FM3560M20 FM3560MT20 FM3540CM14 FM3540CMT14 FM3540 |
4/5-Bit Multiplexed 1-Bit Latched Port with Standard 2-Wire Bus Interface & Non-Volatile Latches
4/5 Bit Multiplexed,1 Bit Latched Port with Standard 2-Wire Bus Interface and Non-Volatile Latches
4/5 Bit Multiplexed/ 1 Bit Latched Port with Standard 2-Wire Bus Interface and Non-Volatile Latches
4/5 Bit Multiplexed, 1 Bit Latched Port with Standard 2-Wire Bus Interface and Non-Volatile Latches
From old datasheet system
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| LS7030-03 |
8 DECADE MULTIPLEXED COUNTER
|
LSI Computer Systems
|
| A43L2616V-6PH A43L2616V-7PH |
Cycle time:6ns; 166MHz CL=3 access time:5.0ns 1M x 16bit x 4banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:5.4ns 1M x 16bit x 4banks synchronous DRAM
|
AMIC Technology
|
| M52D2561616A-2F |
LVCMOS compatible with multiplexed address
|
Elite Semiconductor Mem...
|
| EL4441 EL4442 EL4422 |
Multiplexed-Input Video Amplifiers
|
Intersil Corporation
|
| CX20017 |
Dual 16 Bit 44kHz Multiplexed D/A
|
Sony
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
