PART |
Description |
Maker |
Q62702-G0042 BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
IRFR5410TRLPBF IRFR5410TRPBF IRFR5410TRRPBF IRFR54 |
13 A, 100 V, 0.205 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA Ultra Low On-Resistance Ultra Low On-Resistance ULTRA LOW ON RESISTANCE
|
International Rectifier
|
IRFR3910PBF IRFR3910TR IRFR3910TRPBF IRFR3910PBF-1 |
16 A, 100 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Ultra Low On-Resistance ULTRA LOW ON RESISTANCE Ultra Low On-Resistance
|
International Rectifier
|
F505 M655 C255 C155 C505 |
Typical Applications
|
Vectron International, Inc Vectron International, ...
|
NTLJF3117P1 |
Typical Uses for FETKY Devices
|
ON Semiconductor
|
3B-850A |
TYPICAL OPERATIONG CONDITIONS
|
http://
|
FQD7P20TF |
Low Crss(typical 25 pF)
|
Fairchild Semiconductor
|
PCA1292B-LF |
PHASE NOISE (1 Hz BW, typical)
|
Z-Communications, Inc
|
2DU1 |
Typical UL508 Application
|
Altech corporation
|
PCA1550B-LF |
PHASE NOISE (1 Hz BW, typical)
|
Z-Communications, Inc
|