| PART |
Description |
Maker |
| AGR19060E AGR19060EF AGR19060EU |
60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| AGR19090E AGR19090EF AGR19090EU |
90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| PTF180601 |
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz
|
Infineon Technologies A...
|
| PHI920-45 PH1920-45 |
Wireless Bipolar Power Transistor, 45W 1930 - 1990 MHz
WIRELESS BIPOLAR POWER TRASISTOR 45W 1930-1990 MHZ 无线双极功率45930-1990兆赫TRASISTOR
|
Tyco Electronics
OKI SEMICONDUCTOR CO., LTD.
|
| DSW1064-A |
1930 MHz - 1990 MHz RF/MICROWAVE ISOLATOR
|
|
| CU42JB1P-1950-1T CU48RA5L-250-2T CU49PB3L-600-6C C |
1900 MHz - 2000 MHz RF/MICROWAVE ISOLATOR
100 MHz - 400 MHz RF/MICROWAVE ISOLATOR
400 MHz - 800 MHz RF/MICROWAVE 3 PORT CIRCULATOR
1930 MHz - 1990 MHz RF/MICROWAVE ISOLATOR
|
|
| 1920A12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| MHL19926 |
MHL19926 1930-1990 MHz, 10 W, 29.4 dB RF Linear LDMOS Amplifier
|
Motorola
|
| MHW1910D |
MHW1910-1 1930-1990 MHz, 10 W RF Power LDMOS Amplifier - Archived
|
Motorola
|
| PTF191601 PTF191601E |
LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz
LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz
|
INFINEON[Infineon Technologies AG]
|
| PTFA191001E PTFA191001F |
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz
|
Infineon Technologies AG
|
