| PART |
Description |
Maker |
| PE15A1005 |
40 dB Gain, 1.5 dB NF, 15 dBm, 1.2 GHz to 1.4 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
| BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
|
| BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
| AMMP-5620 |
6 - 20 GHz High Gain Amplife
|
AVAGO TECHNOLOGIES
|
| RFMA5872-1W-Q7 |
5.8 - 7.2 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| CGD1042H CGD1042H-2015 |
1 GHz, 23 dB gain high output power doubler
|
Quanzhou Jinmei Electro...
NXP Semiconductors
|
| ACA2784 |
1 GHz, 21 dB Gain High Output Power DoublerAmplifier
|
ANADIGICS, Inc
|
| AMMP-5620-BLKG AMMP-5620-TR1G AMMP-562013 AMMP-562 |
6 ?20 GHz High Gain Amplifier in SMT Package
|
AVAGO TECHNOLOGIES LIMITED
|
| LD7235 |
30 GHz, 150 W CW, CONDUCTION COOLING, HIGH POWER GAIN
|
NEC Corp.
NEC[NEC]
|
| CGD1044HI |
1 GHz, 25 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| BNT01 |
1.5 -3.0 GHz Wideband High Linearity LNA Gain Block
|
BeRex Corporation
|
| HMC636ST89 HMC636ST89E |
GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
|
