| PART |
Description |
Maker |
| AS4SD4M16DG-10/IT AS4SD4M16DG-10/XT AS4SD4M16DG-8/ |
4 Meg x 16 SDRAM Synchronous DRAM Memory
|
Austin Semiconductor
|
| AS4SD16M1609 AS4SD16M16DG-75_IT AS4SD16M16DG-75_XT |
256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory
|
Austin Semiconductor
|
| AS4SD32M16DGC-75_ET AS4SD32M16DGC-75_IT AS4SD32M16 |
512Mb: 32 Meg x 16 SDRAM Synchronous DRAM Memory
|
Austin Semiconductor
|
| MT41J64M16JT MT41J128M8 MT41J256M4 MT41J64M16JT-12 |
DDR3 SDRAM MT41J256M4 ?32 Meg x 4 x 8 banks MT41J128M8 ?16 Meg x 8 x 8 banks MT41J64M16 ?8 Meg x 16 x 8 banks
|
Micron Technology
|
| MT16LSDT464A |
4 Meg x 64 SDRAM DIMMs(4M x 64????ㄦ?RAM,????存?瀛???ㄦā??
|
Micron Technology, Inc.
|
| 72SD3232RPFK 72SD3232 72SD3232RPFE 72SD3232RPFH 72 |
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks
|
MAXWELL[Maxwell Technologies]
|
| 97SD3248 97SD324806 |
1.5Gb SDRAM 8-Meg X 48-Bit X 4-Banks
|
Maxwell Technologies
|
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
| K4S561632C-TC75 K4S561632C K4S561632C-L1H K4S56163 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
| IS42S16400B-6TL IS42S16400B-7TL IS42S16400B IS42S1 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM 1梅格位16位4银行4兆位）同步动态RAM
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM 1梅格位16位4银行64兆位）同步动态RAM
|
Cypress Semiconductor Corp.
Electronic Theatre Controls, Inc.
ISSI
List of Unclassifed Manufacturers
|
| W986432AH-55 WINBONDELECTRONICSCORP-W986432AH-6 |
512K x 4 BANKS x 32 BITS SDRAM
x32 SDRAM 2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
