| PART |
Description |
Maker |
| CY7C1565V18-300BZI |
72-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1141V18 CY7C1145V18 CY7C1156V18 CY7C1143V18 CY |
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
|
| CY7C1243KV18-400BZC CY7C1243KV18-450BZC CY7C1245KV |
36-Mbit QDRII SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress
|
| CY7C1163KV18-550BZC CY7C1165KV18-400BZC CY7C1165KV |
18-Mbit QDRII SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress
|
| CY7C25652KV18-450BZC CY7C25652KV18-450BZXC CY7C256 |
72-Mbit QDRII SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
|
Cypress
|
| CY7C2263XV18-633BZXC CY7C2263XV18-600BZXC CY7C2265 |
36-Mbit QDRII Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
|
Cypress
|
| CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J- |
18-Mbit QDR™-II SRAM 4-Word Burst Architecture
18-Mbit DDR-II SRAM 2-Word Burst Architecture
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM
SPI Serial EEPROM SPI串行EEPROM
|
Analog Devices, Inc.
|
| M48Z2M1Y10 M48Z2M1V-85PL1 M48Z2M1Y-85PL1 M48Z2M1Y- |
5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER庐 SRAM
5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER? SRAM
2M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36
|
STMicroelectronics
|
| K7R323684MK7R321884MK7R320884M |
1Mx36 & 2Mx18 & 4Mx8 QDRII b4 SRAM Data Sheet
|
Samsung Electronic
|
| SST31LF021-300-4E-WH SST31LF021E-300-4E-WH SST31LF |
2 Mbit Flash 1 Mbit SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PDSO32
2 Mbit Flash 1 Mbit SRAM ComboMemory 2 Mbit闪存1兆位的SRAM ComboMemory
|
Silicon Storage Technology, Inc.
|
