| PART |
Description |
Maker |
| IXGP10N60A |
Low VCE(sat) IGBT, High speed IGBT 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| MG400Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
| IXSH35N135A IXSH35N140A |
1350V high speed IGBT
1400V high speed IGBT
|
IXYS
|
| MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| IXSP24N60B |
48 A, 600 V, N-CHANNEL IGBT, TO-220AB TO-220, 3 PIN
High Speed IGBT
|
IXYS, Corp.
IXYS Corporation
|
| IXGH50N90B2 IXGT50N90B2 |
HiPerFAST IGBT B2-Class High Speed IGBTs
75 A, 900 V, N-CHANNEL IGBT, TO-247AD
|
IXYS Corporation
|
| AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
|
International Rectifier
|
| BUP302 Q67078-A4205-A2 |
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
From old datasheet system
High Speed CMOS Logic Dual Decade Ripple Counters 16-PDIP -55 to 125 IGBT的（低正向压降高开关速度低尾电流的无闩锁雪崩额定
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| IXSH30N60U1 IXSH30N60AU1 |
From old datasheet system
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability
|
IXYS[IXYS Corporation]
|
| RJH60F7ADPK RJH60F7ADPK-00-T0 |
90 A, 600 V, N-CHANNEL IGBT
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH60F6DPK RJH60F6DPK-00-T0 |
85 A, 600 V, N-CHANNEL IGBT
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
