| PART |
Description |
Maker |
| CAT64LC40ZJ CAT64LC40ZS CAT64LC40J-TE7 CAT64LC40J- |
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
72-Mbit QDR™-II SRAM 4-Word Burst Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL™ Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
SPI Serial EEPROM SPI串行EEPROM
72-Mbit QDR-II™ SRAM 2-Word Burst Architecture SPI串行EEPROM
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
|
Analog Devices, Inc.
|
| CY7C1163V18-400BZC |
18-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| Y5-12-12 Y5-12-15 Y5-12-5 Y5-12S15 Y5-12S5 |
72-Mbit QDR-II™ SRAM 2-Word Burst Architecture
256K (32K x 8) Static RAM
16K/32K/64K/128K x 9 Low-Voltage Deep Sync™ FIFOs 模拟IC
72-Mbit QDR-II™ SRAM 2-Word Burst Architecture
USB LOW SPEED, 3 ENDPOINT, ENCORE II, 16-SOIC
|
东电?中国)投资有限公司
|
| CAT93C46AJ CAT93C46AJI CAT93C46AJI-2.5 CAT93C46AJ- |
72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
256K (32K x 8) Static RAM
256 Kb (256K x 1) Static RAM
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
Microwire Serial EEPROM 微型导线串行EEPROM
|
Atmel, Corp.
|
| CY7C1911BV18-278BZXC CY7C1911BV18-278BZXI CY7C1911 |
18-Mbit QDRII SRAM 4-Word Burst Architecture 2M X 9 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture 2M X 8 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture 1M X 18 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture 512K X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1526V18-167BZC CY7C1511V18-167BZC CY7C1513V18- |
72 Mbit QDR-II SRAM 4-word burst architecture. Speed 167 MHz.
72 Mbit QDR-II SRAM 4-word burst architecture. Speed 200 MHz.
|
Cypress
|
| CY7C1413BV18-300BZXC CY7C1413BV18-300BZXI CY7C1413 |
36-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture
36-Mbit QDR??II SRAM 4-Word Burst Architecture
36-Mbit QDR?II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1310BV18-167BZC CY7C1314BV18 CY7C1910BV18 CY7C |
18-Mbit QDR垄芒-II SRAM 2 Word Burst Architecture
18-Mbit QDR??II SRAM 2 Word Burst Architecture
18-Mbit QDR?II SRAM 2 Word Burst Architecture
|
Cypress Semiconductor
http://
|
| R1QFA7218AB R1QCA7218AB R1QDA7218AB R1QCA7236AB R1 |
72-Mbit QDR SRAM 2-word Burst
72-Mbit QDR II SRAM 4-word Burst
|
Renesas Electronics Corporation
|
