| PART |
Description |
Maker |
| SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 在不扩散核武器条约高高速IGBT的技
IGBTs & DuoPacks - 20A 600V TO220 IGBT
IGBTs & DuoPacks - 20A 600V TO247 IGBT
|
Infineon Technologies AG
http://
Infineon Technologies A...
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| P930-06 P444 P465 P474 P577-04 P412W P412K P414KW |
THYRISTOR MODULE|AC SWITCH|1KV V(RRM)|44A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|20A I(T)
THYRISTOR MODULE|SCR DOUBLER|1KV V(RRM)|20A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|600V V(RRM)|20A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|1KV V(RRM)|20A I(T)
THYRISTOR MODULE|AC SWITCH|600V V(RRM)|44A I(T)
16 BIT MCU/DSP 28LD 40MIPS 32KB FLASH, -40C to 125C, 28-SOIC 300mil, TUBE
|
Microchip Technology, Inc.
|
| PS21962-S |
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21964-C PS21964-A |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21963-AT PS21963-CT PS21963-T PS21963-TW |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| STGW20NB60K |
N-CHANNEL 20A - 600V - TO-247 SHORT CIRCUIT PROOF PowerMESH?/a> IGBT
N-CHANNEL 20A - 600V - TO-247 SHORT CIRCUIT PROOF PowerMESH⑩ IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| 6MBI20F-060 |
IGBT(600V 20A)
|
Fuji Electric
|
| 6MBI20GS-060 |
IGBT(600V 20A)
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| AOK20N60 |
600V,20A N-Channel MOSFET
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| IRAMY20UP60B |
iMOTION Series 20A, 600V
|
International Rectifier
|
