| PART |
Description |
Maker |
| FDFMA2P85708 FDFMA2P857 |
-20V Integrated P-Channel PowerTrenchMOSFET and Schottky Diode
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.0A, 120mヘ
Integrated P-Channel PowerTrench庐 MOSFET and Schottky Diode .20V, .3.0A, 120m惟
Integrated P-Channel PowerTrench? MOSFET and Schottky Diode .20V, .3.0A, 120mΩ
|
Fairchild Semiconductor
|
| SI6821DQ |
P-Ch, Reduced Qg, Fast Switching MOSFET Schottky Diode
From old datasheet system
P-Channel Reduced Qg / MOSFET with Schottky Diode
P-Channel, Reduced Qg, MOSFET with Schottky Diode P沟道，减Qg和与MOSFET的肖特基二极
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
| NTLJF3118N NTLJF3118NTAG NTLJF3118NTBG |
Power MOSFET and Schottky Diode 20 V, 4.6 A, uCool N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package
|
ON Semiconductor
|
| HSMS-2800 HSMS-2802 HSMS-2803 HSMS-2804 HSMS-280C |
SURFACE MOUNT RF SCHOTTKY BARRIER DIODES
HSMS-2802 · Low reverse leakage Schottky diode
HSMS-2803 · Low reverse leakage Schottky diode
HSMS-2804 · Low reverse leakage Schottky diode
HSMS-2805 · Low reverse leakage Schottky diode
HSMS-2808 · Low reverse leakage Schottky diode
HSMS-280B · Low reverse leakage Schottky diode
HSMS-280C · Low reverse leakage Schottky diode
HSMS-280E · Low reverse leakage Schottky diode
HSMS-280F · Low reverse leakage Schottky diode
HSMS-280K · Low reverse leakage Schottky diode
HSMS-280L · Low reverse leakage Schottky diode
HSMS-280M · Low reverse leakage Schottky diode
HSMS-280N · Low reverse leakage Schottky diode
HSMS-280R · Low reverse leakage Schottky diode
|
http://
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| NTHD4P02F NTHD4P02FT1 NTHD4P02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET
Power MOSFET and Schottky Diode 2.2 A, 20 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET
|
ONSEMI[ON Semiconductor]
|
| NTLJF3118N |
Power MOSFET and Schottky Diode 20 V, 4.6 A, μCool™ N-Channel, with 2.0 A Schottky Barrier Diode
|
ON Semiconductor
|
| NTLJF1103P NTLJF1103PT1G |
Power MOSFET Schottky Diode
Power MOSFET and Schottky Diode -8 V, -4.3 A, μCool? P-Channel, with 2.0 A Schottky Barrier Diode, 2 x 2 mm, WDFN
|
ON Semiconductor
|
| NTLGF3402PT1G NTLGF3402P NTLGF3402PT2G |
Power MOSFET and Schottky Diode −20 V, −3.9 A FETKY, P−Channel, 2.0 A Schottky Barrier Diode, DFN6
|
ON Semiconductor
|
| FDFS2P753Z |
Integrated P-Channel PowerTrench? MOSFET and Schottky Diode
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF7534D1 IRF7534D1TR |
-20V FETKY - MOSFET and Schottky Diode in a Micro 8 package
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V)
Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
|
IRF[International Rectifier]
|
| SD103AWS-TP SD103BWS-TP |
DIODE SCHOTTKY 40V 350MA SOD323 0.35 A, 40 V, SILICON, SIGNAL DIODE
400mW Small Signal Schottky Diode 20 to 40 Volts
DIODE SCHOTTKY 30V 350MA SOD323
|
Micro Commercial Components, Corp.
|
| CMSSH-3E CMSSH-3SE CMSSH-3AE CMSSH-3CE |
SMD Schottky Diode Dual: High Current: Common Anode
SMD Schottky Diode Dual: High Current: Common Cathode
SMD Schottky Diode Dual: High Current: In Series
SMD Schottky Diode Single: High Current
ENHANCED SPECIFICATION SURFACE MOUNT, SUPERmini SILICON SCHOTTKY DIODES
|
CENTRAL[Central Semiconductor Corp]
|
