PART |
Description |
Maker |
MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应 From old datasheet system 2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
EIB1314-2P EIA1314-2P |
13.75-14.5GHz, 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIA1414-8P |
14.0-14.5GHz, 8W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIA1314A-8P |
13.0-14.5GHz, 8W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIA1314-8P |
13.75-14.5GHz 8W Internally Matched Power FET
|
Excelics Semiconductor
|
EIA1414A-2P |
14.0-14.5GHz 2W Internally Matched Power FET
|
Excelics Semiconductor
|
MGFC36V7785A_04 MGFC36V7785A |
7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC47A7785 |
7.7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
MGFC40V7785A C407785A |
From old datasheet system 7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V7785B C407785B |
From old datasheet system 7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应 2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGFK25V4045_03 MGFK25V4045 MGFK25V404503 |
14.0-14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
|