PART |
Description |
Maker |
CM150DU-12F |
IGBT MODULES HIGH POWER SWITCHING USE 150 A, 600 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
TM25RZ-24 TM25RZ-2H TM25EZ-24 TM25EZ-2H TM25RZ/EZ- |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
VUB120-12NO2 VUB120-16NO2 VUB160-16NO2 VUB160-12NO |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 140 A, 1200 V, N-CHANNEL IGBT Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS, Corp. IXYS[IXYS Corporation]
|
CM100DY-24A09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
CM150DY-12NF09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
CM150DX-24A |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
CM200DY-24A |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
CM600HX-12A |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
CM600HX-24A |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
CM1400DU-24NF CM1400DU-24NF09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|