PART |
Description |
Maker |
APT601R2BN |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 8A I(D) | TO-247AD 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 8A条(丁)|采用TO - 247AD
|
Diodes, Inc.
|
APT1001RBVFR |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | TO-247AD 晶体管| MOSFET的| N沟道| 1KV交五(巴西)直| 11A条(丁)|采用TO - 247AD
|
Microsemi, Corp.
|
APT1001RBNR |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | TO-247AD 晶体管| MOSFET的| N沟道| 1KV交五(巴西)直| 11A条(丁)|采用TO - 247AD
|
Advanced Power Technology, Ltd.
|
CDST-56-G CDST-99-G |
Switching Diodes Array, V-RRM=70V, V-R=70V, P-D=225mW, I-F=200mA
|
Comchip Technology
|
APT30M40B2VR APT30M40LVR APT30M40LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA POWER MOS V 300V 76A 0.040 Ohm
|
Microsemi, Corp. Advanced Power Technology
|
ZXMP7A17G ZXMP7A17GTA ZXMP7A17GTC |
70V P-channel enhancement mode MOSFET
|
Diodes Incorporated
|
DK48N75 |
70V,68A N-Channel Trench Process Power MOSFET
|
Thinki Semiconductor Co...
|
DK48N18 |
70V,158A N-Channel Trench Process Power MOSFET
|
Thinki Semiconductor Co...
|
IRG4BC30WPBF |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)最大\u003d 2.70V @和VGE \u003d 15V的,集成电路\u003d 12A条)
|
International Rectifier, Corp.
|
APT5085BN |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 9.5A I(D) | TO-247AD
|
|
IXTH36P10 |
Standard Power MOSFET 36 A, 100 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS, Corp.
|