PART |
Description |
Maker |
APT1001RBNR |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | TO-247AD 晶体管| MOSFET的| N沟道| 1KV交五(巴西)直| 11A条(丁)|采用TO - 247AD
|
Advanced Power Technology, Ltd.
|
CDST-99-HF |
Halogen Free Switching Diodes Array, V-RRM=70V, V-R=70V, P-D=225mW, I-F=200mA
|
Comchip Technology
|
APT50M60BFN |
TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 500V V(BR)DSS | 76A I(D) 晶体管| MOSFET功率模块|半桥| 500V五(巴西)直| 76A号(丁)
|
Fujitsu, Ltd.
|
IXGH24N60C |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247AD 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 48A条一(c)|采用TO - 247AD
|
IXYS, Corp.
|
HRS75N75V |
70V N-Channel Trench MOSFET
|
SemiHow Co.,Ltd.
|
ZXMP7A17G ZXMP7A17GTA ZXMP7A17GTC |
70V P-channel enhancement mode MOSFET
|
Zetex Semiconductors
|
CS48N80 |
70V,87A N-Channel Trench Process Power MOSFET
|
Thinki Semiconductor Co...
|
IRG4BC30WPBF |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)最大\u003d 2.70V @和VGE \u003d 15V的,集成电路\u003d 12A条)
|
International Rectifier, Corp.
|
IXTQ160N10T IXTH160N10T |
Preliminary Technical Information TrenchMVTM Power MOSFET 160 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS Corporation
|
APT5540BN |
18 A, 550 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
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