| PART |
Description |
Maker |
| BLF6G21-10G |
Power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
| PHI214-30EL PH1214-30EL |
Radar Pulsed Power Transistor, 30W, 1.0ms Pulse, 10% Duty 1.2 - 1.4 GHz
High Speed Comparator; Package: PDIP; No of Pins: 16; Temperature Range: 0°C to 70°C
Radar Pulsed Power Transistor, 3OW, 1 .Oms Pulse, 10% Duty . 1.2 - 1.4 GHz
Radar Pulsed Power Transistor/ 3OW/ 1 .Oms Pulse/ 10% Duty . 1.2 - 1.4 GHz
|
Tyco Electronics
|
| BLF6G27LS-75 BLF6G27-75 |
Product description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
WiMAX power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. BLF6G27-75<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF578XR |
Product descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Power LDMOS transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| PH1214-25L PHI214-25L |
Radar Pulsed Power Transistor, 25W, 300us Pulse, 10% Duty 1.2 - 1.4 GHz
Radar Pulsed Power Transistor, 25W, 300ms Pulse, 10% Duty 1.2 - 1.4 GHz
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 1.6A I(C) | FO-41BVAR
|
Tyco Electronics
|
| MAPR-001011-850S00 |
L BAND, Si, NPN, RF POWER TRANSISTOR ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-2
Avionics Pulsed Power Transistor 850W, 1025-1150 MHz, 10μs Pulse, 1% Duty
Avionics Pulsed Power Transistor 850W, 1025-1150 MHz, 10楼矛s Pulse, 1% Duty
|
M/A-COM Technology Solutions, Inc.
|
| 0912LD20 |
20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET
|
Microsemi Corporation
|
| TFF11145HN BLP7G10S-140 BLP7G10S-140G BLS7G3135LS- |
LDMOS S-Band radar power transistor
Low phase noise LO generator TFF11126HN/N1<SOT616-1 (HVQFN24)|<<http://www.nxp.com/packages/SOT616-1.html<1<Always Pb-free,;
Power LDMOS transistor BLP7G10S-140G<SOT1204 (HSOP4)|<<http://www.nxp.com/packages/SOT1204.html<1<Always Pb-free,;
Power LDMOS transistor BLP7G10S-140<SOT1138 (HSOP4F)|<<http://www.nxp.com/packages/SOT1138.html<1<Always Pb-free,;
SiGe:C Low Noise High Linearity Amplifier
|
NXP Semiconductors N.V.
|
| PH1090-175L07 PH1090-175L |
Avionics Pulsed Power Transistor 175W, 1090 MHz, 250μs Pulse, 10% Duty
Avionics Pulsed Power Transistor 175W, 1090 MHz, 250渭s Pulse, 10% Duty
Avionics Pulsed Power Transistor 175W, 1090 MHz, 250レs Pulse, 10% Duty
|
Tyco Electronics
|
| PH2731-5M |
Radar Pulsed Power Transistor 5W, 2.7-3.1 GHz, 100μs Pulse, 10% Duty
Radar Pulsed Power Transistor 5W, 2.7-3.1 GHz, 100楼矛s Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
|
