| PART |
Description |
Maker |
| 0961024033SPD050 0961024026SPD051 0961024028SPD055 |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
DREHPOTENTIOMETER DRAHT LIN 6.3MM 2K5 1W
DREHPOTENTIOMETER DRAHT LIN 6.3MM 50R 1W
DREHPOTENTIOMETER DRAHT LIN6.3MM 100R 1W
DREHPOTENTIOMETER DRAHT LIN6.3MM 250R 1W
DREHPOTENTIOMETER DRAHT LIN6.3MM 500R 1W
DREHPOTENTIOMETER DRAHT LIN 6.3MM 25K 1W
DREHPOTENTIOMETER DRAHT LIN 6.3MM 1K 1W
DREHPOTENTIOMETER DRAHT LIN 6.3MM 50K 1W DREHPOTENTIOMETER金属丝林6.3毫米50KW
|
SIEMENS AG
|
| STM32F100V4H6B STM32F100V4H6BTR STM32F100V4H7B STM |
Low & medium-density value line, advanced ARM-based 32-bit MCU Low & medium-density value line, advanced ARM-based 32-bit MCU
|
STMicroelectronics
|
| STM32F103VBT6TR STM32F103VBT6XXX STM32F103VBT7TR S |
Medium-density performance line ARM-based 32-bit MCU with 64 or 128 KB Flash, USB, CAN, 7 timers, 2 ADCs, 9 communication interfaces
|
STMicroelectronics
|
| UJA1061 UJA1061TW |
Low speed CAN/LIN system basis chip
|
NXP Semiconductors
|
| STM32F102X8 STM32F102XB STM32F102R8T6 STM32F102RBT |
Medium-density USB access line,ARM-based 32b MCU with 64/128KB Flash,USB FS interface,6 timers, ADC&8 com. interfaces
|
STMicroelectronics
|
| BAT15-013 BAT15-013S BAT15-033 BAT15-034 BAT15-043 |
From old datasheet system
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz)
330MHz Buffered Video Switches Crosspoint Building Blocks
Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps
500MHz, Low-Power Op Amps
BBG LO PWR MULT MOD H FRE; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
400MHz, Ultra-Low-Distortion Op Amps
250MHz, Broadcast-Quality, Low-Power Video Op Amps
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管（伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器）
350MHz, Ultra-Low-Noise Op Amps SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| ISPLSI2032VL ISPLSI2032VL-110LB49 ISPLSI2032VL-110 |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD
2.5V In-System Programmable SuperFAST⑩ High Density PLD
2.5V In-System Programmable SuperFAST High Density PLD
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP48
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP44
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP44
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 5 ns, PQCC44
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 5 ns, PQFP44
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| ISPLSI2192VE-135LT128 ISPLSI2192VE-180-L-T128 ISPL |
3.3V In-System Programmable SuperFAST High Density PLD
3.3V In-System Programmable SuperFAST⑩ High Density PLD
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD
RELAY SSR 110A 240VAC AC INPUT
3.3V In-System Programmable SuperFASTHigh Density PLD
|
LATTICE[Lattice Semiconductor]
LatticeSemiconductor
Lattice Semiconductor Corporation
|
| TSM3400CXRF |
High Density Cell Design for Ultra Low On-resistance
|
TY Semiconductor Co., Ltd
|
| AMS2301A |
Super high density cell design for extremely low
|
Advanced Monolithic Systems Ltd
|
