| PART |
Description |
Maker |
| RM400HV-34S |
CAP CER 22000PF 10% 50V X8R 0805
HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 1N4148WS |
High Speed Switching Diode Fast Switching Speed Automatic Insertion
|
First Components International
|
| BAR63-02L BAR63-02V BAR63-07L4 BAR63-04W BAR63-03W |
Silicon PIN Diodes 硅PIN二极
PIN Diodes - PIN diode for high-speed switching of RF signals
PIN Diodes - High-Speed switching diode in ultra-small SC79 Package
|
INFINEON[Infineon Technologies AG]
|
| CPD63 |
Chip Form: HIGH SPEED SWITCHING DIODE
Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor
|
| 1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| 1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage High Speed Switching Applications
|
TOSHIBA
|
| RM50HG-12S RM50HG-12S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| CPD83V |
Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor Corp
|
| BAW56U |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching
|
Infineon
|
| GDMBD2004 |
The GDMBD2004 is designed for ultra high speed switching
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| Q62702-A1050 BAS16W |
Silicon Switching Diode (For high speed switching applications) 0.25 A, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Siemens Semiconductor Group
|
| BAS16W |
High Speed Switching Diode 350mW 0.1 A, 75 V, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
Micro Commercial Components Corp.
|
