| PART |
Description |
Maker |
| MC-4532CC726EF-A80 MC-4532CC726EF-A10 MC-4532CC726 |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
32M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
|
ELPIDA MEMORY INC
|
| HYMD212G726DF4-D43 HYMD212G726DF4-D43J HYMD212G726 |
184pin Registered DDR SDRAM DIMMs
32M X 8 DDR DRAM MODULE, 0.7 ns, DMA184 ROHS COMPLIANT, DIMM-184
32M X 8 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
|
http://
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| EDD5108ADTA-7BTI EDD5116ADTA-7BTI EDD5108ADTA-TI D |
512M bits DDR SDRAM WTR (Wide Temperature Range)
32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Elpida Memory
ELPIDA MEMORY INC
|
| EDD5108ADTA-6BLI EDD5116ADTA-6BLI EDD5116ADTA-7ALI |
32M X 16 DDR DRAM, 0.75 ns, PDSO66
512M bits DDR SDRAM WTR (Wide Temperature Range)
|
ELPIDA MEMORY INC
|
| HY5DU56822AF HY5DU56422AF-J HY5DU561622AF HY5DU564 |
32M X 8 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM - 256Mb
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
|
HYNIX SEMICONDUCTOR INC
|
| K4M511633C-RBF1H K4M511633C-RBF75 K4M511633C-RBL K |
32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
8M X 16BIT X 4 BANKS MOBILE SDRAM IN 54FBGA
|
Samsung semiconductor
|
| THMY7232B0EG-80 |
32M Word x 72 Bit Synchronous DRAM Module(32M字x 72位同步DRAM模块)
|
Toshiba Corporation
|
| HYMD232646C8J-J HYMD232646C8J-D43 |
32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
DDR SDRAM - Unbuffered DIMM 256MB
|
Hynix Semiconductor, Inc.
|
| HY5PS121621CFP-C4I HY5PS12821CFP-C4I HY5PS121621CF |
512Mb DDR2 SDRAM
32M X 16 DDR DRAM, 0.45 ns, PBGA84
128M X 4 DDR DRAM, 0.45 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| HM64YGB36100-15 |
32M Synchronous Late Write Fast Static RAM (1-Mword × 36-bit)
|
Renesas Electronics Corporation
|
