| PART |
Description |
Maker |
| HY5DU283222F HY5DU283222F-26 HY5DU283222F-33 HY5DU |
GDDR SDRAM - 128Mb
128M(4MX32) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY5DS113222FM-28 HY5DS113222FM-33 HY5DS113222FM-36 |
GDDR SDRAM - 512Mb
512M(16Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| HYB25D128160AT-6 HYB25D128400AT-7 HYB25D128800AT-7 |
DDR SDRAM Components - 128Mb (8Mx16) DDR333 (2.5-3-3)
DDR SDRAM Components - 128Mb (32Mx4) DDR266A (2-3-3)
DDR SDRAM Components - 128Mb (16mx8) DDR266A (2-3-3)
128 Mbit Double Data Rate SDRAM
|
Infineon
|
| W9412G2IB |
1M X 4 BANKS X 32 BITS GDDR SDRAM
|
Winbond
|
| W9412G2CB |
1M 】 4 BANKS 】 32 BITS GDDR SDRAM
|
Winbond
|
| W9412G2CB |
1M × 4 BANKS × 32 BITS GDDR SDRAM
|
Winbond
|
| HY5DU561622CTP-28 HY5DU561622CTP-33 HY5DU561622CTP |
256M(16Mx16) gDDR SDRAM
|
Hynix Semiconductor
|
| HY5DV281622DT-5 HY5DV281622DT-36 HY5DV281622DT-33 |
128M(8Mx16) GDDR SDRAM 8M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Hynix Semiconductor, Inc.
|
| HY5DS113222FM HY5DS113222FM-4 HY5DS113222FMP-4 HY5 |
512M(16Mx32) GDDR SDRAM 16M X 32 DDR DRAM, 0.6 ns, PBGA144
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
