| PART |
Description |
Maker |
| PH1090-175L PH1090-175 PH1090 |
Avionics Pulsed Power Transistor175 Watts锛?1030-1090MHz
Avionics Pulsed Power Transistor - 175 Watts, 1030-1090 MHz, 250ms Pulse,
Avionics Pulsed Power Transistor - 175 Watts 1030-1090 MHz 250ms Pulse
Avionics Pulsed Power Transistor175 Watts1030-1090MHz
|
MACOM[Tyco Electronics]
|
| 1011LD300 |
RF Power Transistors: AVIONICS
300 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET
|
ADPOW[Advanced Power Technology]
|
| TAN350 |
350 Watts, 50 Volts, Pulsed Avionics 960 1215 MHz 350瓦，50伏特，脉冲航空电601215兆赫
TACAN 960-1215 MHz, Class C, Common Base, Pulsed; P(out) (W): 350; P(in) (W): 70; Gain (dB): 7; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
350 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz
|
Electronic Theatre Controls, Inc.
Microsemi, Corp.
ETC[ETC]
List of Unclassifed Manufacturers
|
| ITC1000 |
RF Power Transistors: AVIONICS
1000 WATT, 50V, Pulsed Avionics 1030 MHz
1000 WATT 50V Pulsed Avionics 1030 MHz
|
Advanced Power Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| PH1090-700B |
Avionics Pulsed Power Transistor
|
M/A-COM Technology Solutions, Inc.
|
| PH1090-350L |
Avionics Pulsed Power Transistor
|
M/A-COM Technology Solutions, Inc.
|
| 0912LD20 |
Pulsed Power Avionics 960-1215 MHz (Si)
|
Microsemi
|
| 1011LD110B |
Pulsed Power Avionics 960-1215 MHz (Si)
|
Microsemi
|
| HVV1012-100 |
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10楼矛s Pulse, 1% Duty for DME and TCAS Applications
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Applications
|
HVVi Semiconductors, Inc.
|
| HVV1012-250 HVV1012-250-EK |
L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10楼矛s Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications
L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications
|
HVVi Semiconductors, Inc.
|
| TPR1000 |
Transponder/ 1090 MHz, Class C, Common Base, Pulsed; P(out) (W): 1000; P(in) (W): 250; Gain (dB): 6; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: 55KV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
1000 Watts, 45 Volts, Pulsed Avionics 1090 MHz
high power COMMON BASE bipolar transistor.
|
Microsemi, Corp.
ETC[ETC]
GHZTECH[GHz Technology]
List of Unclassifed Manufacturers
|
