| PART |
Description |
Maker |
| APT40M70JVFR |
53 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: ISOTOP®; ID (A): 53; RDS(on) (Ohms): 0.07; BVDSS (V): 400;
POWER MOS V FREDFET
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| APT30M40LVFR APT30M40B2VFR APT30M40B2VFRG |
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V FREDFET
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT6010B2FLL APT6010LFLL |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS 7 FREDFET
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| APT12031JFLL |
30 A, 1200 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS 7 FREDFET
|
Advanced Power Technology
|
| APT40N60LCF APT40N60LCFG APT40N60B2CFG APT40N60B2C |
Super Junction FREDFET 40 A, 600 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APT26F120B2 APT26F120L |
N-Channel FREDFET 1200V, 26A, 0.65Ω Max, trr ?35ns
N-Channel FREDFET 1200V, 26A, 0.65ヘ Max, trr ÷335ns
|
Microsemi Corporation
|
| BYP102 C67047-A2071-A2 |
FRED Diode(FRED 二极 李华明二极管（弗雷德二极管）
FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics)
From old datasheet system
FRED-FET Diode
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| C67078-A3210-A2 BUZ385 |
From old datasheet system
SIPMOS Power Transistor (N channel Enhancement mode FREDFET)
20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
|
