| PART |
Description |
Maker |
| MT58L1MY18D MT58L512Y32D MT58L512Y36D MT58V512V36D |
16Mb SYNCBURST⑩ SRAM
16Mb SYNCBURST SRAM
|
MICRON[Micron Technology]
|
| MT55L512Y36P MT55L512Y32P MT55L1MY18P |
16Mb: 512K x 36，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 32，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
|
Micron Technology, Inc.
|
| R1LV1616RBG-8SI R1LV1616RBG-8SR R1LV1616RSD-5SI R1 |
16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit)
|
http://
Renesas Electronics Corporation
|
| VG3617801BT-10 VG3617801BT-8H VG3617801BT-8L VG361 |
16Mb CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| VG3617161BT VG3617161BT-55 VG3617161BT-6 VG3617161 |
16Mb CMOS Synchronous Dynamic RAM
|
ETC[ETC]
|
| VG3617161DT VG3617161DT-6 VG3617161DT-7 VG3617161D |
16Mb CMOS Synchronous Dynamic RAM
|
Vanguard International Semi...
|
| HY57V161610FTP-XX HY57V161610FT-XX HY57V161610FT-5 |
16M SDRAM
16Mb Synchronous DRAM
|
Hynix Semiconductor
|
| DS3070W-100 |
3.3V Single-Piece 16Mb Nonvolatile SRAM with Clock 3.3V的单16Mb的非易失SRAM，带有时
|
Maxim Integrated Products, Inc.
|
| KMM5364003CK KMM5364103CK |
(KMM5364103CK / KMM5364003CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas
|
Samsung Semiconductor
|
| M29W128FL60N6E M29W128FL60N6F M29W128FL70ZA6E M29W |
128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory
|
Numonyx B.V
|
| M29W128FH M29W128FH60N6E M29W128FH60N6F M29W128FH6 |
128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory
|
Numonyx B.V
|
| M30L0R8000B0 M30L0R8000B0ZAQ M30L0R8000B0ZAQE M30L |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
