| PART |
Description |
Maker |
| NT256D64S88A0G NT256D64S88A0G-7K NT256D64S88A0G-75 |
256Mb: 32Mx64 unbuffered DDR SDRAM module based 32x8 SDRAM
184pin One Bank Unbuffered DDR SDRAM MODULE 一位银行无缓冲184pin DDR SDRAM内存模块
|
NANYA
ETC
Electronic Theatre Controls, Inc.
|
| HYMD132645BL8J-J HYMD116G725BL8-M HYMD116G725BL8-L |
32Mx64|2.5V|J|x16|DDR SDRAM - Unbuffered DIMM 256MB
Unbuffered DDR SDRAM DIMM
SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC
|
Hynix Semiconductor
|
| M368L1713CTL-LB3 M368L1713CTL M368L1713CTL-CA2 M36 |
128MB DDR SDRAM MODULE (16Mx64 based on 16Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| M368L2923BTM |
(M368LxxxxBxM) DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die
|
Samsung semiconductor
|
| M368L6523DUS-LB3 M381L6523DUM-LCC M381L6523DUM-LB3 |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模84pin缓冲模块的发展为本的512Mb芯片4/72-bit非ECC /有铅ECC6 TSOP-II免费（符合RoHS
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYMD564646L8 HYMD5646468 HYMD564646XXX HYMD5646468 |
Unbuffered DDR SDRAM DIMM
64Mx64|2.5V|K/H/L|x8|DDR SDRAM - Unbuffered DIMM 512MB
64M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
| M383L2828CT1 |
M383L2828CT1 DDR SDRAM 184pin DIMM 128Mx72 DDR SDRAM Data Sheet
|
Samsung Electronic
|
| HYMD132645D8J-D4 HYMD132645D8J-D43 HYMD132645D8J-J |
DDR SDRAM - Unbuffered DIMM 256MB
32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor, Inc.
|
| HDD16M72D9RPW-13A HDD16M72D9RPW-13B HDD16M72D9RPW- |
DDR SDRAM Module 128Mbyte (16Mx72bit), based on 16Mx8, 4Banks 4K Ref., 184Pin-DIMM with PLL & Register
DDR SDRAM Module 128Mbyte (16Mx72bit), based on 16Mx8, 4Banks 4K Ref., 184Pin-DIMM with PLL & Register DDR SDRAM内存模块128Mbyte6Mx72bit），基于6Mx8Banks 4K的参考。，184Pin - DIMM内存的锁相环
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| M470L6524BTU0-CLCC M470L3324BTU0-CLB3 M470L6524BTU |
RECTIFIER FAST-RECOVERY SINGLE 1A 50V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 1K/BULK
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die DDR SDRAM的缓冲模18 4针缓冲模块基12Mb乙芯
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HDD64M72D18W-13B HDD64M72D18W-13A HDD64M72D18W-10A |
DDR SDRAM Module 512Mbyte (64Mx72bit), based on 32Mx8, 4Banks, 8K Ref., with 184Pin-DIMM DDR SDRAM内存模块512Mbyte4Mx72bit），2Mx8BanksK的参考依据。与184Pin - DIMM内存
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM
300MHz 2.8V 4M x 32 DDR SDRAM
333MHz 2.8V 4M x 32 DDR SDRAM
350MHz 2.8V 4M x 32 DDR SDRAM
4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.]
Etron Technology Inc.
ETRON[Etron Technology Inc.]
|
