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BUL642D2 - High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network

BUL642D2_4605842.PDF Datasheet

Part No.

BUL642D2 BUL642D2G

Description

High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network

File Size

93.19K / 8 Page

Maker

ON Semiconductor

JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: BUL67

Maker: ST/0N

Pack: TO-220

Stock: Reserved

Unit price for :

50: $0.37

100: $0.35

1000: $0.33

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Full text search : High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network

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