| PART |
Description |
Maker |
| 1N6687US 1N6686 1N6686US 1N6687 |
20 AMPS 100 - 200 VOLTS 40 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDR622CT/CAP6 SDR620CT/CAP6 SDR621CT/CAP6 |
40 AMPS 100 - 200 VOLTS 35 nsec HYPER FAST COMMOM CATHODE CENTERTAP RECTIFIER 80 A, 200 V, SILICON, RECTIFIER DIODE
40 AMPS 100 - 200 VOLTS 35 nsec HYPER FAST COMMOM CATHODE CENTERTAP RECTIFIER 20 A, 100 V, SILICON, RECTIFIER DIODE
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| SDR620CAM SDR620CAZ SDR620DZ |
40 AMPS 100 - 200 VOLTS 35 nsec HYPER FAST COMMOM CATHODE CENTERTAP RECTIFIER 40 A, 100 V, SILICON, RECTIFIER DIODE, TO-254AA
|
Solid State Devices, Inc.
|
| SDR1512S.5UF SDR1510 SDR1510JUF SDR1510JUFDB SDR15 |
15 AMPS 1000 - 1200 VOLTS 75 nsec ULTRA FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| APT2X101D20J |
Fast Recovery Epitaxial Diode; Package: ISOTOP®; IO (A): 100; VR (V): 200; trr (nsec): 39; VF (V): 1.1; Qrr (nC): 840; 100 A, 200 V, SILICON, RECTIFIER DIODE
|
Microsemi, Corp.
|
| 12R3SS 12R3STX 20R3SS 20R3STXV 15R3S 15R3SS 15R3ST |
8 AMPS 20 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER
8 AMPS 20 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER
|
Solid States Devices, I...
|
| SHM120F SHM140F SHM40F SHM60F SHM80F SHM100F SHM15 |
50-250 mA 1500-14000 VOLTS 150-200 nsec HIGH VOLTAGE RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDR9102PHC SDR9100PHC SDR9101PHC |
100 AMP 100 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SPD55501 SPD5554SMSS SPD5554SMSTX SPD5554SMSTXV SP |
5 AMPS, 200 thru 1000 VOLTS 2 レsec STANDARD RECOVERY RECTIFIER 5 A, 1000 V, SILICON, RECTIFIER DIODE
5 AMPS, 200 thru 1000 VOLTS 2 レsec STANDARD RECOVERY RECTIFIER 1.3 A, 1000 V, SILICON, RECTIFIER DIODE
|
Solid States Devices, Inc
Solid State Devices, Inc.
|
| SDR10KTXV SDR10GSMS |
10 AMPS 200 - 1000 VOLTS 5 ns STANDARD RECOVERY RECTIFIER
|
Solid States Devices, Inc
|
| PPHR70L60A |
Insulated Gate Bipolar Transistor; Package: TO-254; VCE(sat) (V): 1.6; t(on) (nsec): 115; IC (A): 70; PD (W): 300; E(off) (mJ): 15; Rq: 0.4; Qg(on) (nC): 150; t(off) (nsec): 1700; BV(CES) (V): 600; VGE(th) (V): 3 70 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
