| PART |
Description |
Maker |
| HYB39S16400AT-10 HYB39S16400AT-8 Q67100-Q1333 Q671 |
16 MBit Synchronous DRAM 4M X 4 SYNCHRONOUS DRAM, 8 ns, PDSO44
16 MBit Synchronous DRAM 2M X 8 SYNCHRONOUS DRAM, 10 ns, PDSO44
Multipole Connector 1M X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50
DB25PH 16兆位同步DRAM
16 MBit Synchronous DRAM 16兆位同步DRAM
|
Siemens Semiconductor Group
SIEMENS AG
|
| EM484M3244VBA-8FE EM484M3244VBA-75FE EM484M3244VBA |
256Mb (2MBank32) Synchronous DRAM
256Mb (2MBank2) Synchronous DRAM 256Mb的（200万?4Bank2）同步DRAM
256Mb (2M??Bank??2) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
| HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| H57V1262GTR-50X H57V1262GTR-60X H57V1262GTR-70X H5 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
| K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S |
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS42S16160B IS42S83200B IS42S16160B-7BI IS42S16160 |
32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Integrated Silicon Solution, Inc.
|
| IBM03164B9C IBM0316809C |
16Mb Synchronous DRAM(16M位同步动态RAM)
16MbMbit x 8 I/O x 2 Bank）Synchronous DRAM(16M位（1Mx 8 I/O x 2 组）同步动态RAM)
|
IBM Microeletronics
|
| K4S160822DT-G/F10 K4S160822DT-G/F7 K4S160822D K4S1 |
2M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO44
2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY5V66EF6 HY5V66EF6-5 HY5V66EF6-6 HY5V66EF6-7 HY5V |
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA60
|
Hynix Semiconductor, Inc.
HYNIX[Hynix Semiconductor]
|
| M52S16161A-10TG M52S16161A-8BG |
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA60
|
Elite Semiconductor Memory Technology, Inc.
|
| HY57V561620CT-H HY57V561620CLT-P HY57V561620CLTP-P |
4 Banks x 4M x 16Bit Synchronous DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| M12S64322A-7BG |
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Elite Semiconductor Memory Technology, Inc.
|
