PART |
Description |
Maker |
3VD395650YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
3VD324500YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
3VD324600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
3VD393600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
1206SXXX 1808AXXX 2225AXXX 2220GXXX 1825CXXX 2220H |
High Voltage MLC Chips
|
AVX Corporation
|
TNPW2010 TNPW0805 TNPW1206 TNPW0402 TNPW1210 TNPW2 |
Ultra-stable thin film technology; Pulse resistant; Thin Film Flat Chip Resistors;
High-Stability Thin Film, Rectangular, Resistor Chips Thin Film/ Rectangular/ Resistor Chips
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
|
International Rectifier
|
T497B475K006BT6210 T497A106K010BH6110 |
HIGH GRADE COTS TANTALUM CHIPS
|
Kemet Corporation http://
|
BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管(高击穿电压低集电极发射极饱和电压) Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
T497C475K006AT6210 T497C475K006AH6210 |
HIGH GRADE COTS TANTALUM CHIPS 高品位的COTS钽切
|
KEMET Corporation
|