| PART |
Description |
Maker |
| BLF6G22-45 |
Power LDMOS transistor
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| MAPLST1617-030CF MAPLST1617-030CF-15 |
LDMOS RF Line Power FET Transistor
LDMOS RF Line Power FET Transistor 30 W , 1600-1700 MHz, 28V
|
M/A-COM Technology Solu...
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| BLP15M7160P |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF6G10LS-200R |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF6G15LS-250PBRN |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF7G20L-200 |
Power LDMOS transistor
|
Philips Semiconductors
|
| BLF6G10S-45 |
Power LDMOS Transistor
|
Philips Semiconductors
|
| BLF7G27L-140 |
Power LDMOS transistor
|
Philips Semiconductors
|
| LP701-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF10H6600P BLF10H6600PS BLF10H6600P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
