| PART |
Description |
Maker |
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| BLF7G22LS-100P |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| TFF11145HN BLP7G10S-140 BLP7G10S-140G BLS7G3135LS- |
LDMOS S-Band radar power transistor
Low phase noise LO generator TFF11126HN/N1<SOT616-1 (HVQFN24)|<<http://www.nxp.com/packages/SOT616-1.html<1<Always Pb-free,;
Power LDMOS transistor BLP7G10S-140G<SOT1204 (HSOP4)|<<http://www.nxp.com/packages/SOT1204.html<1<Always Pb-free,;
Power LDMOS transistor BLP7G10S-140<SOT1138 (HSOP4F)|<<http://www.nxp.com/packages/SOT1138.html<1<Always Pb-free,;
SiGe:C Low Noise High Linearity Amplifier
|
NXP Semiconductors N.V.
|
| LX703-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF8G27LS-140 |
Power LDMOS transistor
|
NXP Semiconductors
|
| LB501A |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| LR301-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLP05H6200XR-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF7G24LS-100 BLF7G24L-100 |
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF6G22LS-180RN |
Power LDMOS Transistor
|
Philips Semiconductors
|
| BLF10H6600P BLF10H6600PS BLF10H6600P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
